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| SMD Type NPN Silicon Epitaxial Transistor 2SC1621 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High speed : tstg=20ns MAX. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 40 20 5 200 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350is,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 30V, IE=0 VEB = 4V, IC=0 VCE = 0.5V , IC = 1mA 40 80 0.13 0.74 200 500 3.0 12 See Test Circuit 7 18 6.0 20 20 40 Min Typ Max 100 100 180 0.25 0.85 V V MHz pF ns ns ns Unit nA nA VCE(sat) IC = 10mA , IB = 1mA VBE(sat) IC = 10mA , IB = 1mA fT Cob ton tstg toff VCE = 10V , IE = -10mA VCB = 10V , IE = 0 , f = 1.0MHz +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC1621 Transistors IC hFE Classification Marking hFE B2 40 80 B3 60 120 B4 90 180 2 www.kexin.com.cn |
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